The use of silicon-on-insulator (SOI) technology in microelectronics is proliferating and is ready to be applied in a growing number of IC fabrication situations. Bonding of single crystal Si to dielectrics, normally silicon dioxide, is a key method of producing SOI structures and this work is designed to assist engineers directly in applying emerging SOI technology in practice. Wafer bonding principles, grind and polish back, Smartcut, Eltran and wafer characterization are all explained and illustrated for the benefit of the process development engineer.
Table of Contents
Introduction S.S.Iyer; 1 Wafer bonding principles Q.-Y. Tong; 2 Bond, grind-back and polish SOI K.Mitani; 3 Smart Cut: the technology for high volume SOI B.Aspar and A.J.Auberton-Herve; 4 ELTRAN (SOI-Epi wafer) technology T.Yonehara; 5 Wafer characterisation G.Pfeiffer and S.S.Iyer; 6 Advanced applications of wafer bonding E.C.Jones and S.W.Bedell; Appendix: A manufacturing process for silicon-on-silicon wafer bonding K.Bansal and J.P.Goodrich. Index