The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Table of Contents
Preface. Color Tables. 1 Light-Emitting Diodes and Lighting. Introduction. 1.1 Current-Conduction Mechanism in LED-Like Structures. 1.2 Optical Output Power. 1.3 Losses and Efficiency. 1.4 Current Crowding. 1.5 Packaging. 1.6 Perception of Visible Light and Color. 1.7 Visible-Light Terminology. 1.8 Inroads by LEDs. 1.9 Nitride LED Performance. 1.10 On the Nature of Light Emission in Nitride-Based LEDs. 1.11 LED Degradation. 1.12 LED Efficiency. 1.13 Monochrome Applications of LEDs. 1.14 Luminescence Conversion and White-Light Generation with Nitride LEDs. 1.15 Approaches to White-Light Generation. 1.16 Toward the White-Light Applications. 1.17 Organic/Polymeric LEDs (OLED, PLED). 2 Semiconductor Lasers. Introduction. 2.1 A Primer to the Principles of Lasers. 2.2 Waveguiding. 2.3 Loss, Threshold, and Cavity Modes. 2.4 Optical Gain. 2.5 Coulombic Effects. 2.6 Numerical Gain Calculations for GaN. 2.7 Threshold Current. 2.8 Analysis of Injection Lasers with Simplifying Assumptions. 2.9 Recombination Lifetime. 2.10 Quantum Efficiency. 2.11 GaN-Based LD Design and Performance. 2.12 Gain Spectra of InGaN Injection Lasers. 2.13 Near-UV Lasers. 2.14 Reflector Stacks and Vertical Cavity Surface-Emitting Lasers (VCSELs). 2.15 Polariton Lasers. 2.16 GaInNAs Quaternary Infrared Lasers. 2.17 Laser Degradation. 2.18 Applications of GaN-Based Lasers to DVDs. 2.19 A Succinct Review of the Laser Evolution in Nitrides. 3 Field Effect Transistors and Heterojunction Bipolar Transistors. Introduction. 3.1 Heterojunction Field Effect Transistors. 3.2 The s-Parameters and Gain. 3.3 Equivalent Circuit Models, Deembedding, and Cutoff Frequency. 3.4 HFET Amplifier Classification and Efficiency. 3.5 AlGaN/GaN HFETs. 3.6 Electronic Noise. 3.7 Dielectrics for Passivation Purposes or Gate Leakage Reduction. 3.8 Heat Dissipation and Junction Temperature. 3.9 Hot Phonon Effects. 3.10 InGaN Channel and/or InAlN Barrier HFETs. 3.11 FET Degradation. 3.12 Heterojunction Bipolar Transistors. 3.13 Concluding Comments. 3.14 Appendix: Sheet Charge Calculation in AlGaN/GaN Structures with AlN Interface Layer (AlGaN/AlN/GaN). 4 Ultraviolet Detectors. Introduction. 4.1 Principles of Photodetectors. 4.2 Particulars of Deep UV Radiation and Detection. 4.3 Si and SiC-Based UV Photodetectors. 4.4 Nitride-Based Detectors. 4.5 UV Imagers. 4.6 Concluding Comments. References. Index. Appendix.
Hadis Morkoc received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoc has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoc is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.