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GaP Heteroepitaxy on Si(100) on Hardback by Henning Doscher
GaP Heteroepitaxy on Si(100) on Hardback by Henning Doscher
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GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
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Description

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Author Biography:

Dr. Henning Döscher TU Ilmenau Institut für Physik, FG Photovoltaik Ehrenbergstr. 29 98693 Ilmenau
Release date NZ
December 11th, 2013
Audience
  • Professional & Vocational
Illustrations
33 Illustrations, color; 47 Illustrations, black and white; XIV, 143 p. 80 illus., 33 illus. in color.
Pages
143
Dimensions
155x235x13
ISBN-13
9783319028798
Product ID
21692424

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GaP Heteroepitaxy on Si(100) by Henning Doscher
$293.00
GaP Heteroepitaxy on Si(100)
by Henning Doscher ~ Paperback / softback
Available - Usually ships in 3-4 weeks

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