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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Volume 46 on Hardback
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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: Volume 46

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Description

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Author Biography:

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Release date NZ
June 12th, 1997
Audience
  • Professional & Vocational
Contributors
  • Series edited by Eicke R. Weber
  • Series edited by Robert K. Willardson
  • Volume editor Constantinos Christofides
  • Volume editor Gerard Ghibaudo
Country of Publication
United States
Imprint
Academic Press Inc
Pages
316
Publisher
Elsevier Science Publishing Co Inc
Dimensions
152x229x22
ISBN-13
9780127521466
Product ID
2496781

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