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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155
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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155

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Description

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
Release date NZ
June 5th, 2014
Audiences
  • Postgraduate, Research & Scholarly
  • Professional & Vocational
Contributors
  • Edited by Alexander A Demkov
  • Edited by Bill Taylor
  • Edited by H. Rusty Harris
  • Edited by Jeffery W. Butterbaugh
  • Edited by Willy Rachmady
Pages
194
Dimensions
152x229x10
ISBN-13
9781107408326
Product ID
22128481

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