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Charge-Based MOS Transistor Modeling

The EKV Model for Low-Power and RF IC Design



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Charge-Based MOS Transistor Modeling by Christian C Enz
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As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies. The authors of this book are the designers of the EKV MOS transistor model and are best placed to write a comprehensive treatment of the model, its applications and advantages. The text builds a solid understanding of the physics of the MOS transistor and presents modelling techniques for analog integrated circuit design. - Presents all the physical aspects of the MOS transistor using the new EKV model developed by the authors. - Provides comprehensive treatment of semiconductor modelling for integrated circuit design. - Explains the physics and operation of the MOS transistor and applies the EKV model to analog and RF circuit design. - The EKV model allows product design and simulation for low power circuit applications. Existing texts fail to provide sufficient coverage of this new model. An accompanying website (hosted by the authors) houses a supplementary MathCAD handbook including model and circuit design exercises. - Includes coverage of MOS transistor modelling for RF frequencies.

Author Biography

Christian C. Enz and Eric A. Vittoz are the authors of Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design, published by Wiley.
Release date NZ
July 14th, 2006
Country of Publication
United States
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