Level up to unmatched performance, power efficiency and endurance
If you're a heavy workload professional searching for an SSD with uncompromising power and performance, look no further. The next-generation Samsung 950 PRO delivers exceptional performance for professionals.

This cutting-edge V-NAND-based NVMe SSD supports PCI Express® Gen 3 x4 lanes, providing a higher bandwidth and lower latency to process a massive amount more data than SATA SSDs. Presented in a compact M.2 form factor, the future-oriented 950 PRO is ideal for professionals using high-end PCs and workstations.

Experience a next-generation SSD today
Equipped with the enhanced bandwidth of the NVMe interface, the 950 PRO is ideal for intensive workloads, such as computer-aided design, data analysis and engineering simulations. It outperforms SATA SSDs by over 4.5 times in sequential read and by over 2.5 times in sequential write, delivering the speeds of 2,500 MB/s and 1,500 MB/s res­pectively.

Save power while maintaining peak performance
If you're in the midst of performing a complex data analysis or engineering simulation on your laptop, you surely don't want to run out your battery. Compared to SATA SSD power consumption, the 950 PRO is up to 1.5 times more power efficient, so your battery will last longer and maintain superior performance levels.

Maximize endurance under heavy workloads
The innovative V-NAND technology in the 950 PRO increases endurance and prolongs the lifespan with insulators that cause less stress and are more resistant to wear under heavy client workloads over a 5-year period. The 950 PRO also features Dynamic Thermal Throttling Protection technology, which controls the temperature of the device to reduce overheating and maintain a high level of sustained performance.

General Feature

• Application: Client PCs
• Capacity : 512 GB (1 GB=1 Billionbyte by IDEMA)
• Form Factor: M.2
• Interface: PCIe 3.0 x4 (up to 32 GB/s) NVMe 1.1
• Dimension (WxHxD): Max. 80.15×22.15×2.38 (mm)
• Weight: Max. 10g
• Storage Memory: Samsung V-NAND
• Controller: Samsung UBX controller
• Cache Memory: Samsung 512 MB Low Power DDR3 SDRAM

Special Feature

• TRIM Support: TRIM Supported
• S.M.A.R.T Support: S.M.A.R.T Supported
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption Support: AES 256-bit for User Data Encryption
• TCG Opal Family Spec and eDrive(IEEE1667) to be supported by FW update
• WWN Support: N/A
• Device Sleep Mode Support: Yes

Performance

• Sequential Read: Up to 2,500 MB/sec
• Sequential Write: Up to 1,500 MB/sec
• Random Read (4KB, QD32): Up to 300,000 IOPS
• Random Write (4KB, QD32): Up to 110,000 IOPS
• Random Read (4KB, QD1): Up to 12,000 IOPS
• Random Write (4KB, QD1): Up to 43,000 IOPS

Environment

• Average Power Consumption (system level):
  • Average: 5.7 Watts
  • Maximum: 7.0 Watts (Burst mode)
• Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Operating Temperature: 0C to 70C (Measured by SMART Temperature. Proper airflow recommended)
• Shock: 1500G , duration 0.5m sec, 3 axis