Transmission Electron Microscopy of Semiconductor Nanostructures

This book provides tools well suited for the
quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor
nanostructures with a spatial resolution at near atomic scales. The book
focuses on new methods including strain state
analysis as well as evaluation of the composition
via the lattice fringe analysis (CELFA) technique.
The basics of these procedures as well as their
advantages, drawbacks and sources of error are all
discussed. The techniques are applied to quantum
wells and dots in order to give insight into
kinetic growth effects such as segregation and
migration. In the first part of the book the fundamentals of
transmission electron microscopy are provided.
These are needed for an understanding of the
digital image analysis techniques described in the
second part of the book. There the reader will
find information on different methods of
composition determination. The third part of the
book focuses on applications such as composition
determination in InGaAs Stranski—Krastanov
quantum dots. Finally it is shown how an
improvement in the precision of the composition
evaluation can be obtained by combining CELFA with
electron holography. This is demonstrated for an
AlAs/GaAs superlattice.