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Fabrication and Characterization of Zno Nanowire Transistors - Vertically Aligned Zno Nanowire Arrays, Multiple Channel Nanowire-Based Transistors

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Paperback

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Fabrication and Characterization of Zno Nanowire Transistors - Vertically Aligned Zno Nanowire Arrays, Multiple Channel Nanowire-Based Transistors by Chia-Ling Hsu
$173.99
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Description

Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.
Release date NZ
December 29th, 2008
Author
Country of Publication
Germany
Illustrations
black & white illustrations
Imprint
VDM Verlag
Dimensions
152x229x7
ISBN-13
9783639114508
Product ID
2958388

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