What is 3D V-NAND and how does it differ from existing technology?
Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9× faster random write speeds for 120/250 GB models as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.
Guaranteed endurance and reliability bolstered by 3D V-NAND technology
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW compared to the previous generation 840 EVO backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices.
Get into the fast lane with the improved RAPID mode
Samsung's Magician software which provides Rapid Mode for 2× faster processing data speeds on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2× performance boost in all random Queue depth.
Compute longer with improved energy efficiency backed by 3D V-NAND
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
Secure valuable data through advanced AES 256 encryption
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
Protect against overheating with a highly responsive Dynamic Thermal Guard
The 850 EVO's Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.
Level up to the 850 EVO simply without any hassle
In three simple steps the Samsung's One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimise and manage your system best suited for your SSD.
Specifications
General
Capacity 2,000 GB
Form Factor 2.5 inch
Interface SATA 6Gb/s Interface, compatible with SATA 3Gb/s
& SATA 1.5Gb/s interface
Dimension (WxHxD) 100 X 69.85 X 6.8 (mm)
Weight Max 66g
Storage Memory Samsung 32 layer 3D V-NAND
Controller Samsung MHX Controller
Cache Memory Samsung 2 GB Low Power DDR3 SDRAM
Special Features
- TRIM Support
- TRIM Supported
- S.M.A.R.T Support
- S.M.A.R.T Supported
- GC (Garbage Collection)
- Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Full Disk Encryption (FDE)
TCG/Opal v2.0, Encrypted Drive (IEEE1667)
WWN Support Yes
Device Sleep Mode Support Yes
Performance
Sequential Read Up to 540 MB/sec
Sequential Write Up to 520 MB/sec
Random Read (4 KB, QD 32) Up to 98,000 IOPS Random Read
Random Write (4 KB, QD 32) Up to 90,000 IOPS Random Write
Random Read (4 KB, QD 1) Up to 10,000 IOPS Random Read
Random Write (4 KB, QD 1) Up to 40,000 IOPS Random Write
Environment
Average Power Consumption (system level)
- Average: 4.7 Watts
- Maximum: 7.2 Watts (Burst mode)
Power consumption (Idle) Max. 50 mWatts
Allowable Voltage 5 V ± 5% Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 – 70 °C
Shock 1,500 G & 0.5 ms (Half sine)
Software
Management SW: Magician Software for SSD management